it u na. 20 stern ave. springfield, new jersey 07081 md7003, f MD7003A, af md7003b mq7003 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 multiple silicon annular transistors . . .designed for use as high-gain, low-noise differential amplifiers, front end detectors, and temperature compensation applications. ? low collector-emitter saturation voltage - vce(sat) ? '25 vdc (typ) ?> ic = 10 madc ? dc current gain specified ?> 1 00 /iadc and 1 0 madc ? high current-gain-bandwidth product - fr ? 300 mhz (tvp) @ ic = 5.0 madc maximum ratings collector-emitter voltaga collector-bale voluga emitter-bate voltage collector currant - continuoui total powar oinipation s> ta - 25c md7003.a.b md7003f.af mo7003 derate above 25ac m07003.a.b md7003f.af mo7003 total power oitlipation s tc- 25c mo 7003, a .8 mo70o3f.af mq70o3 dlrata above 25c md70o3.a.b mo7003f.af mq7003 operating and storaga junction temperature range thermal characteristics character into thermal retiftance, junction to awv&ien1 mo7003,a,b md7003f.af mq7003 tharmal railitanca. junction to case md70o3.a.b mo7003f.af mq7003 vceq vcb v6b >c "d "?o tj.t,,9 symbol r0ja*1* rdjc coupling factor md7003.a.b mo7003f.af mq70o3 iq1-q2) iai-q3or q1-o4) 40 50 5.0 50 one die 550 350 400 314 2.0 2.28 14 0.7 07 8.0 40 4.0 aiidia equal powar 600 400 600 3.42 2.26 3.42 j.o 1.4 2.8 11.4 a.o 16 -65 to ?200 one die 319 500 438 125 250 250 junction to ambient 83 75 57 56 all on eogial powar 292 438 292 87.5 125 626 junction to can 40 0 0 0 vdc vdc vdc madc -c watti mw/c c unit c/w c/w , 11' hsja '* maasiired with th? davica loidared into a typical printed circuit board. pnp silicon dual transistors ?asp 11 i j-o \f > rvtn m 1 cbuictoft 1 ehittfl ] iah 1 um case be407 md700&a* 1 1 ufa i .uheltl laaf-urt i dim. 3! t~-f m ? sc af min 0.240 q.i is 0,030 an u o.ooi 1! max 0.290 l.l&o into 3.019 s?s oho bsc - | 0.03j - 1 ^m r >? -i mq7003 ttt_.jll.-^[- mot cd mcud ass s; ii twtt u iab cast 607 w mm ruh ' ? s a f ~h: b ? 0. 1 f-k- jl -f * i 1 7,1 1 cum mak 8? 1.05 "ttts" 7ic _ ih b__^_ tl _-? oji n 1 ill 1 5**^ inches 1 jl i sb" "fear m 0. ft - p3m mai u2s. i, n ; ?l 5i_ j it ijji. - - irst ljs. nj^^semi-conductors reserves the nght to change test conditions, parameter limits and package dimensions without notice. lnrormat,on turmsheci b> nj sem.-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use \\s encourages customers to verity that datasheets nre current before placing orders. ounlih/
md7003,a,af,b,f. mq7003 (continued) thermal coupling and effective thermal resistance in multiple chip devices, coupling of htit between die occurs. the junction temper iturs can bt calculated n fellovn: r?3*?3p03 + r?4 k?4 pd4 where atj 1 is the change in junction tempereture of die 1 r?1 thru 4 is the thermal resistance of die 1 through 4 pd1 thru 4 is the power dissipation in die 1 through 4 k02 thru 4 is the thermal coupling between die 1 and die 2 through 4. an effective package thermal resistence can be defined follows: assuming equal thermal resilience for each die, equation 11} simplifies to rs1 (pd, where: - is the total package powtr dissipation. for the conditions where pdi ? p02 " po3 " pd4> pdt " ^o equation 13) can be further simplified and by substituting into equation (2) results in <4ir9(eff)-r?1 (1 *k?2+k|l3 volues for the coupling factors when either the case or the ambient is used as a reference are given in the table on page 1. if significent power is to be diuipated in two die. die at the opposite ends of the package should be umd so that lowest possible junction temperatures will result. electrical characteristics ita * 2sc unless otherwise noted.) l characteristic i symbol | min typ \x gnit \ characteristics collector-emitter breakdown voltage id (lc- lowadc. ib- 0) collector. biu breakdown voltega dc" lofiadc.lg- 0) emitter-bese breakdown voltage (ie- 10wadc,lc- 0) collector cutoff current (vcb - 30 vdc, if - 0) bvceo bvcbo 6veb0 !cbo 40 so 5.0 - - - - - - - - 100 vdc vdc vdc nadc on characteristics dc current gain (1) (lc- 100/iadc. vc- lovdcl (1c- lomadc, vce- lovdcl collector-emitter saturation voltage (iq- lomadc, ig- lomadc) beet-emitter seturation voltage (1c* 10madc, ig- lomadc) "fe vce(sat) vbe(iet) 40 50 _ _ 350 350 025 0.6 - - 0.3s 1.0 _ vdc vdc dynamic characteristics current-gein? bandwidth product MD7003A.af iic-ioopadc, vce- 10 vdc) m07003b base-emitter voltage differential md7cw3a.af (1c- 100 nadc, vce* lovdcl md7003b i>fe1"1fe2 vbei-vbez! 0.76 0.85 - _ ~ 1.0 1.0 25 16 - mv (1) pulse test: pulse width < 300 us. duty cycle < 2.0%. (2) the lowest hpe reeding is tekan "hpel for this ratio.
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